Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...

Impurity free vacancy disordering of InGaAs quantum dots

Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes

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Dual wavelength single waveguide laser diode fabricated using selective area quantum well intermixing

A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. Th...

Quantum well intermixing in GaInNAs/GaAs structures